Design and fabrication of GaAs MMIC high power amplifier for KT IMT-2000 handset

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) Pub Date : 1999-09-15 DOI:10.1109/TENCON.1999.818476

J. M. Nam, Jang Won Ho, Chung Myung Rea, Lee Yun Hyun

引用次数: 0

Abstract

A GaAs power amplifier MMIC for an IMT-2000 handset is designed, fabricated and analyzed. The power amplifier, which is of A-class, has 4 times the bandwidth in the RF range (1955 /spl plusmn/70 MHz), a 570 mW output power, a 41% power added efficiency, -15/spl sim/-20 dB reflection coefficient, a 0.5 dB gain flatness in the operating frequency, and an input & output VSWR below 1.3 is realized.

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KT IMT-2000手机用GaAs MMIC高功率放大器的设计与制造

设计、制作并分析了一种用于IMT-2000手机的GaAs功率放大器MMIC。该功率放大器为a级，在RF范围内带宽(1955 /spl plusmn/ 70mhz)提高4倍，输出功率为570mw，功率附加效率为41%，反射系数为-15/spl sim/- 20db，工作频率增益平坦度为0.5 dB，输入输出驻波比低于1.3。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030)

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