Analytical model to study temperature dependent Negative Capacitance effect on long channel Double Gate Ferroelectric Junctionless Transistor

Abstract

In this work, we have theoretically investigated the impact of temperature dependent Negative Capacitance (NC) effect on electrical characteristics of long channel Double Gate Ferroelectric Junctionless Transistor for temperature range 280 to 340K. We have considered metal-ferroelectric-semiconductor (MFS) structure and incorporated ferroelectric material Strontium Bismuth Tantalate (SBT) as gate insulator. The impact of temperature variation on electrical parameters such as surface potential, gain, gate capacitance, and mobile charge density has been studied. It has been observed that internal voltage amplification decreases with increase in temperature. Also, degradation of gain and gate capacitance is observed with gradual increase in temperature.