{"title":"Soft fails due to LU stress of virtual power domains","authors":"K. Domanski, H. Gossner","doi":"10.1109/EOSESD.2015.7314795","DOIUrl":null,"url":null,"abstract":"A shut-down of IC was caused by current injection into a USB 2.0 pin. Root cause was a substrate current forced into a power rail supplied by a weak LDO. Connecting the guard rings to a robust VDD supply resolved the problem. As the failure could not be revealed by JESD78 testing, a modified latchup test setup is proposed.","PeriodicalId":341383,"journal":{"name":"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2015.7314795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A shut-down of IC was caused by current injection into a USB 2.0 pin. Root cause was a substrate current forced into a power rail supplied by a weak LDO. Connecting the guard rings to a robust VDD supply resolved the problem. As the failure could not be revealed by JESD78 testing, a modified latchup test setup is proposed.