Mirror Full Adder SET Susceptibility on 7nm FinFET Technology

Rafael N. M. Oliveira, F. A. D. Silva, R. Reis, C. Meinhardt
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引用次数: 1

Abstract

This work investigates the Mirror full adder circuit using a 7nm FinFET technology, considering the SET susceptibility and the robustness of all internal nodes of the circuit. This work aims to identify how this full adder topology behaves in a specific environment, observing the charge collected at each internal node. The devices involved in the processing of the carry-out function shown to be more robust than the Sum circuit and also presented a lower error rate. Furthermore, the input vector 000 proved to be the most critical one, among the input combinations, and the results show a dependence of the type of pulse in the generation of errors in the Mirror full adder.
7nm FinFET技术的镜面全加法器SET磁化率
这项工作研究了使用7nm FinFET技术的Mirror全加法器电路,考虑了电路的SET敏感性和所有内部节点的鲁棒性。这项工作旨在通过观察在每个内部节点收集的电荷,确定该全加法器拓扑在特定环境中的行为。所涉及的执行功能处理的器件显示出比Sum电路更健壮,并且也呈现出更低的错误率。此外,在输入组合中,输入向量000被证明是最关键的输入向量,并且结果表明,在镜像全加法器中,脉冲类型对误差的产生有依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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