Linearity performance of GaN HEMTs with field plates

Abstract

Recently, electric field modification with GaN-based high-electron-mobility-transistors (HEMTs) using field plates (FP) has resulted in dramatically enhanced power performance. Power densities up to 32 W/mm at 4 GHz have been demonstrated with power-added-efficiency (PAE) of 55%. When scaled to a large periphery, a total output power of 149 W was obtained at 2 GHz. Modern communication applications also require high linearity for power devices. Here we present the linearity performance of GaN-channel HEMTs with various FP lengths at biases up to 108V.