Statistical Analysis of Bit-Errors Distribution for Reliability of 3-D NAND Flash Memories

Abstract

The gamma-Poisson distribution is proposed to model bit-errors distribution with empirically observed number of error bits after reliability tests of program/erase endurance, retention and read disturb. Through a detailed characterization of 2-D SLC, 3-D MLC, and 3-D TLC flash memories, we observed that the gamma-Poisson distribution well describes dispersion phenomenon in flash array and could apply for further reliability analysis in a more efficient way and accurate estimation of uncorrectable bit error rate.