Single-wafer processing: opportunities and challenges

R. Doering
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引用次数: 1

Abstract

As we approach the 0.25-/spl mu/m technology node and 300-mm wafer manufacturing, the industry is challenged to develop new thermal processing tools to replace traditional large-batch furnaces. The most technically challenging process for practical single-wafer implementation is thick oxidation (e.g., for device isolation). In general, the tradeoff between process uniformity, yield and throughput, for each thermal process, will be reflected in the single-wafer vs. minibatch configuration of these tools. The last bastion of large batch processing will probably be wet immersion cleanups, which are less sensitive to the "device- and wafer-scaling pressures". However, the migration of thermal processing away from large batches will exert "logistical pressure" on the associated cleanups to follow suit. Additional motivations for single-wafer processing are discussed.
单晶圆加工:机遇与挑战
随着我们接近0.25-/spl mu/m技术节点和300毫米晶圆制造,行业面临着开发新的热加工工具以取代传统大批量炉的挑战。对于实际的单晶圆实施来说,技术上最具挑战性的过程是厚氧化(例如,用于设备隔离)。一般来说,每个热过程的工艺均匀性、良率和吞吐量之间的权衡将反映在这些工具的单晶圆与小批量配置中。大规模批量处理的最后一个堡垒可能是湿浸式清洗,它对“设备和晶圆结垢压力”不太敏感。然而,热加工远离大批量的迁移将对相关的清理施加“后勤压力”。讨论了单晶圆加工的其他动机。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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