Performance Analysis of a Novel Hetero-material InAs/GaAs Junctionless TFET

Abstract

In this work, we proposed and investigated the performance features of a hetero-material junctionless tunnel field-effect transistor (HM-JLTFET) by incorporating -compound semiconducting materials, InAs having low work function, in the source section and GaAs having higher work function, in the channel and drain sections, respectively. The transfer characteristics, subthreshold slope, leakage current, and current switching ratio of the proposed device are also compared with the conventional TFET device having the same dimensions as that of HM-JLTFET. The simulated results reflect the capability of the proposed device to suppress the performance degradation factors like leakage current and power consumption along with improving the current driving capability and fast switching at low gate voltage.