Influence of oxygen on the crystallization process in Ge: Sb:Te:O films

2006 3rd International Conference on Electrical and Electronics Engineering Pub Date : 2006-12-04 DOI:10.1109/ICEEE.2006.251847

E. Morales‐Sánchez, J. González-Hernández, P. Herrera-Fierro, B. Chao, Y. Kovalenko, E. Prokhorov

{"title":"Influence of oxygen on the crystallization process in Ge: Sb:Te:O films","authors":"E. Morales‐Sánchez, J. González-Hernández, P. Herrera-Fierro, B. Chao, Y. Kovalenko, E. Prokhorov","doi":"10.1109/ICEEE.2006.251847","DOIUrl":null,"url":null,"abstract":"Ge:Sb:Te thin films have been studied extensively due to their application in phase-change optical memory technology. In this work Ge:Sb:Te:O films with oxygen in the range between 2 to 28 atomic %, are analyzed using X-ray diffraction and XPS measurements. The location of the oxygen in the structure of these films has been deduced from these measurements. Experimental results have shown that in films with oxygen content below 10 atomic %, Te, Sb and most of Ge are in metallic state and the free oxygen is located at the tetrahedral interstitial sites. In these films the oxygen acts as nucleation center in the process of crystallization. In films with higher contents of oxygen tellurium is in metallic state while some of the germanium and antimony form amorphous oxide and due to the deficit of germanium and antimony the amorphous films crystallized into the Sb2Te3 rhombohedral phase with the segregation of crystalline Te. From this characteristics GeSbTe-O can be used as active material in multi level optical memories","PeriodicalId":125310,"journal":{"name":"2006 3rd International Conference on Electrical and Electronics Engineering","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 3rd International Conference on Electrical and Electronics Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEE.2006.251847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

Ge:Sb:Te thin films have been studied extensively due to their application in phase-change optical memory technology. In this work Ge:Sb:Te:O films with oxygen in the range between 2 to 28 atomic %, are analyzed using X-ray diffraction and XPS measurements. The location of the oxygen in the structure of these films has been deduced from these measurements. Experimental results have shown that in films with oxygen content below 10 atomic %, Te, Sb and most of Ge are in metallic state and the free oxygen is located at the tetrahedral interstitial sites. In these films the oxygen acts as nucleation center in the process of crystallization. In films with higher contents of oxygen tellurium is in metallic state while some of the germanium and antimony form amorphous oxide and due to the deficit of germanium and antimony the amorphous films crystallized into the Sb2Te3 rhombohedral phase with the segregation of crystalline Te. From this characteristics GeSbTe-O can be used as active material in multi level optical memories

查看原文本刊更多论文

氧对Ge: Sb:Te:O薄膜结晶过程的影响

Ge:Sb:Te薄膜由于在相变光存储技术中的应用而受到广泛的研究。本文用x射线衍射和XPS测量分析了含氧在2 ~ 28原子%范围内的Ge:Sb:Te:O薄膜。氧在这些薄膜结构中的位置是由这些测量推断出来的。实验结果表明，在氧含量低于10原子%的薄膜中，Te、Sb和大部分Ge处于金属态，游离氧位于四面体间隙位。在这些薄膜中，氧在结晶过程中起成核中心的作用。在含氧量较高的薄膜中，碲处于金属态，而部分锗和锑形成非晶态氧化物，由于锗和锑的缺乏，非晶态薄膜结晶成Sb2Te3菱面体相，晶体Te偏析。基于这一特性，GeSbTe-O可以用作多能级光存储器的有源材料

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2006 3rd International Conference on Electrical and Electronics Engineering

自引率

0.00%

发文量