High precision low power CMOS bandgap for RFID

Abstract

In this paper, a low power high precision bandgap reference with a third-order temperature compensation and a high slope positive-temperature coefficient voltage are designed using a SMIC 180 nm BiCMOS process. The structure of positive temperature coefficient current and negative temperature coefficient current subtraction are used to obtain a high slope positive temperature coefficient current, which is more convenient for sampling of the rear circuit. The simulation show when the temperature is changed within the range of −25 to 100 °C, the temperature coefficient of the output reference voltage is 3.8ppm/°C, the slope of the PTAT voltage is 5.13mV/°C the PSRR at low frequency is −62dB. At a power supply voltage of 1.8V, the overall power consumption is 50uW.