A Survey on Field Effect Transistor Based Hydrogen and Nitrogen Gas Sensors

Abstract

The presented work encircles the survey on different types of Nitrogen and Hydrogen gas sensor with the modified field-effect transistors (FETs) structures. By modifying the structure, through addition of different kind of particles (palladium, platinum, tungsten) or tubes (carbon nanotubes) , the unique sensing device designs are achieved. The structural overview of CNT-based FETs (CNTFETs), Pd-FET, Dual FET, and Tungsten gate FET for Nitrogen and Hydrogen gas detection, their sensing mechanisms, sensitivity are mainly the emphasis of this review work. The COSFET (Chalcogenide-oxide-siliconFET), CNTFET, WO3MOS2 (Tungsten trioxide- Molybdenum disulfide) , are reviewed as nitrogen gas sensor having sensitivity of 100,1.2,45 respectively with-respect-to time and PNINGAA-FET(n+ source pocket doped PIN gate all around tunnel FET), Pd-MOSFET(Palladium-based Trench Gate MOSFET) and Dual-FET used as a hydrogen gas sensor having sensitivity of 105, 10 and 100 with-respect-to pressure in Torr.