Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI:10.1109/ICDCSYST.2014.6926183

Ajay, R. Narang, M. Saxena, Mridula Gupta

{"title":"Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor","authors":"Ajay, R. Narang, M. Saxena, Mridula Gupta","doi":"10.1109/ICDCSYST.2014.6926183","DOIUrl":null,"url":null,"abstract":"In this paper, an analytical model of a split-gate dielectric modulated Metal-oxide-semiconductor field-effect transistor (DM-MOSFET) for label free electrical detection of the biomolecules has been proposed. To provide a binding site for the biomolecules the channel region of MOSFET is left open in the four-gate configuration which is conventionally covered by the gate electrode. As result, the surface potential in this open area is affected by the neutral and charged biomolecules that binds to the underlap (open) channel. The solution of surface potential is obtained by solving a 2-D Poisson equation assuming parabolic potential profile along the channel direction using conformal mapping technique. The analytical model of threshold voltage is derived from the surface potential model and change in the threshold voltage is used as a sensing metric for detection of biomolecules after immobilization in the open region. The characteristics trends are supported and verified via “ATLAS” device simulation software.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

Abstract

In this paper, an analytical model of a split-gate dielectric modulated Metal-oxide-semiconductor field-effect transistor (DM-MOSFET) for label free electrical detection of the biomolecules has been proposed. To provide a binding site for the biomolecules the channel region of MOSFET is left open in the four-gate configuration which is conventionally covered by the gate electrode. As result, the surface potential in this open area is affected by the neutral and charged biomolecules that binds to the underlap (open) channel. The solution of surface potential is obtained by solving a 2-D Poisson equation assuming parabolic potential profile along the channel direction using conformal mapping technique. The analytical model of threshold voltage is derived from the surface potential model and change in the threshold voltage is used as a sensing metric for detection of biomolecules after immobilization in the open region. The characteristics trends are supported and verified via “ATLAS” device simulation software.

查看原文本刊更多论文

用于生物传感器的分栅介质调制金属-氧化物半导体场效应晶体管的分析建模

本文提出了一种用于生物分子无标记电检测的分栅介质调制金属氧化物半导体场效应晶体管(DM-MOSFET)的解析模型。为了提供生物分子的结合位点，MOSFET的通道区域在四栅极结构中是开放的，通常被栅极电极覆盖。因此，这个开放区域的表面电位受到结合在覆盖下(开放)通道上的中性和带电生物分子的影响。采用保角映射技术求解沿通道方向假设抛物线势分布的二维泊松方程，得到表面势的解。阈值电压的解析模型由表面电位模型推导而来，并将阈值电压的变化作为生物分子在开放区域固定后检测的传感指标。通过“ATLAS”器件仿真软件对特性趋势进行了支持和验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

自引率

0.00%

发文量