A low power wide tuning range VCO with coupled LC tanks

Shouxian Mou, Kaixue Ma, K. Yeo, N. Mahalingam, Bharatha Kumar Thangarasu
{"title":"A low power wide tuning range VCO with coupled LC tanks","authors":"Shouxian Mou, Kaixue Ma, K. Yeo, N. Mahalingam, Bharatha Kumar Thangarasu","doi":"10.1109/SOCC.2011.6085075","DOIUrl":null,"url":null,"abstract":"A 12GHz VCO fabricated in a 0.18µm SiGe BiCMOS technology with only CMOS devices, is presented. To improve tuning range and phase noise, a technique using strongly magnetic coupled LC tanks with fixed and tunable capacitive elements is proposed. The VCO achieves wide tuning range of 4.3GHz (36%) with only 4.5mW power consumption. The proposed VCO including buffer stage occupies a chip area of 0.17mm2, and can be easily integrated on-chip with other blocks.","PeriodicalId":365422,"journal":{"name":"2011 IEEE International SOC Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International SOC Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2011.6085075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A 12GHz VCO fabricated in a 0.18µm SiGe BiCMOS technology with only CMOS devices, is presented. To improve tuning range and phase noise, a technique using strongly magnetic coupled LC tanks with fixed and tunable capacitive elements is proposed. The VCO achieves wide tuning range of 4.3GHz (36%) with only 4.5mW power consumption. The proposed VCO including buffer stage occupies a chip area of 0.17mm2, and can be easily integrated on-chip with other blocks.
低功率宽调谐范围VCO与耦合LC油箱
提出了一种采用0.18 μ m SiGe BiCMOS技术,仅采用CMOS器件的12GHz压控振荡器。为了改善调谐范围和相位噪声,提出了一种采用具有固定可调谐电容元件的强磁耦合LC槽的技术。VCO实现了4.3GHz(36%)的宽调谐范围,功耗仅为4.5mW。所提出的包含缓冲级的VCO芯片面积为0.17mm2,并且可以很容易地与其他模块集成在片上。
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