Accurate mapping of oxide traps in highly-stable black phosphorus FETs

Abstract

We examine highly-stable black phosphorus field-effect transistors and demonstrate that they can exhibit reproducible characteristics for over ten months. Nevertheless, we show that the performance of these devices is affected by thermally activated charge trapping in oxide traps. In order to characterize these important traps, we introduce a universal experimental technique which allows for an accurate mapping of the defects with different time constants. At room temperature the extracted oxide trap densities are close to those reported for more mature Si/SiO2 devices.