Application of high-frequency short-pulsed plasma-immersion ion implantation or deposition method for dielectric materials processing using gas, metal and gas-metal plasma

A. Ryabchikov, I. Stepanov, D. Sivin, A. I. Bumagina
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Abstract

A new approach in the development of advanced coating deposition and ion implantation method including an application of filtered dc metal plasma and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10%-99% are considered. The ion energy spectrum for different negative bias potential pulse duration (120-1100) ns was measured. The map of different methods of ion beam and plasma material treatment using high-frequency short pulse metal plasma immersion ion implantation or deposition depending on bias pulse duty factor and amplitude for Cu plasma is presented. The ion assisted coating deposition depending on samples conductivity and thickness, plasma concentration, pulse repetition rate and amplitude and duty factor has been examined.
高频短脉冲等离子体浸没离子注入或沉积方法在气体、金属和气体-金属等离子体介质材料加工中的应用
考虑了采用滤波直流金属等离子体和占空比在10% ~ 99%范围内的高频短脉冲负偏置电压来发展先进涂层沉积和离子注入方法的新途径。测量了不同负偏置电位脉冲持续时间(120 ~ 1100)ns下的离子能谱。给出了高频短脉冲金属等离子体浸没离子注入或沉积对铜等离子体不同偏压脉冲占空因子和幅值的离子束和等离子体材料处理方法图。研究了离子辅助涂层沉积对样品电导率和厚度、等离子体浓度、脉冲重复率和振幅以及占空因子的影响。
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