I. Barbu, M. Ivan, P. Giesen, Michael J. Van de Moosdijk, E. Meinders
{"title":"Advances in maskless and mask-based optical lithography on plastic flexible substrates","authors":"I. Barbu, M. Ivan, P. Giesen, Michael J. Van de Moosdijk, E. Meinders","doi":"10.1117/12.837171","DOIUrl":null,"url":null,"abstract":"Organic flexible electronics is an emerging technology with huge potential growth in the future which is likely to open up a complete new series of potential applications such as flexible OLED-based displays, urban commercial signage, and flexible electronic paper. The transistor is the fundamental building block of all these applications. A key challenge in patterning transistors on flexible plastic substrates stems from the in-plane nonlinear deformations as a consequence of foil expansion/shrinkage, moisture uptake, baking etc. during various processing steps. Optical maskless lithography is one of the potential candidates for compensating for these foil distortions by in-situ adjustment prior to exposure of the new layer image with respect to the already patterned layers. Maskless lithography also brings the added value of reducing the cost-of-ownership related to traditional mask-based tools by eliminating the need for expensive masks. For the purpose of this paper, single-layer maskless exposures at 355 nm were performed on gold-coated poly(ethylenenaphthalate) (PEN) flexible substrates temporarily attached to rigid carriers to ensure dimensional stability during processing. Two positive photoresists were employed for this study and the results on plastic foils were benchmarked against maskless as well as mask-based (ASML PAS 5500/100D stepper) exposures on silicon wafers.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithography Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.837171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Organic flexible electronics is an emerging technology with huge potential growth in the future which is likely to open up a complete new series of potential applications such as flexible OLED-based displays, urban commercial signage, and flexible electronic paper. The transistor is the fundamental building block of all these applications. A key challenge in patterning transistors on flexible plastic substrates stems from the in-plane nonlinear deformations as a consequence of foil expansion/shrinkage, moisture uptake, baking etc. during various processing steps. Optical maskless lithography is one of the potential candidates for compensating for these foil distortions by in-situ adjustment prior to exposure of the new layer image with respect to the already patterned layers. Maskless lithography also brings the added value of reducing the cost-of-ownership related to traditional mask-based tools by eliminating the need for expensive masks. For the purpose of this paper, single-layer maskless exposures at 355 nm were performed on gold-coated poly(ethylenenaphthalate) (PEN) flexible substrates temporarily attached to rigid carriers to ensure dimensional stability during processing. Two positive photoresists were employed for this study and the results on plastic foils were benchmarked against maskless as well as mask-based (ASML PAS 5500/100D stepper) exposures on silicon wafers.
有机柔性电子是一项具有巨大增长潜力的新兴技术,未来可能会开辟一系列全新的潜在应用领域,如基于柔性oled的显示器、城市商业标牌、柔性电子纸等。晶体管是所有这些应用的基本组成部分。在柔性塑料衬底上制作晶体管图像化的一个关键挑战是,在不同的加工步骤中,由于箔的膨胀/收缩、吸湿、烘烤等导致的面内非线性变形。光学无掩模光刻是补偿这些箔扭曲的潜在候选者之一,在曝光新层图像之前,相对于已经有图案的层进行原位调整。无掩模光刻技术还带来了附加价值,通过消除对昂贵掩模的需求,降低了与传统掩模工具相关的拥有成本。为了确保加工过程中的尺寸稳定性,我们在355nm处对涂有金的聚邻苯二甲酸乙酯(PEN)柔性衬底进行了单层无掩模曝光,该衬底暂时附着在刚性载体上。本研究采用了两种正光刻胶,并将塑料箔上的结果与硅片上的无掩膜和基于掩膜的(ASML PAS 5500/100D步进)曝光进行了基准测试。