Electromigration in Flip Chip Pb-Free Solder Joints

K. Tu
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引用次数: 1

Abstract

Summary form only given. The demand of flip chip technology in high density packaging for advanced electronic consumer products is growing rapidly. Due to the decrease in device size and increase in functionality, electromigration has now become the most serious reliability problem in flip chip solder joints, especially the Pb-free. Electromigration in flip chip solder joints has several unique features that are very different from the electromigration in Al and Cu interconnects. Solder alloy has a very small critical product of electromigration. thus it can fail at 103 A/cm2. Owing to the line-to-bump geometry in flip chip, current crowding occurs at the contact between the line and the bump and the failure mode of electromigration is a pancake-type void formation at the cathode. Eutectic solder composition has a constant chemical potential below the eutectic temperature, so it enables up-hill diffusion and a nearly complete phase separation to occur in electromigration without resistance. Joule heating due to Al or Cu interconnects can cause a very large temperature gradient in the solder joint, so thermomigration accompanies electromigration. In this talk, the reliability issues of flip chip solder joints when electrical force is combined with thermal force, chemical force or mechanical force will be discussed.
倒装芯片无铅焊点的电迁移
只提供摘要形式。在先进的电子消费产品的高密度封装倒装芯片技术的需求正在迅速增长。由于器件尺寸的减小和功能的增加,电迁移现已成为倒装芯片焊点,特别是无铅焊点中最严重的可靠性问题。倒装片焊点中的电迁移与铝和铜互连中的电迁移有几个独特的特点。焊料合金的电迁移临界产物很小。因此,它可以在103 A/cm2时失效。由于倒装芯片的线-凸点几何结构,在线与凸点接触处会产生电流拥挤,电迁移的失效模式是在阴极处形成煎饼状空洞。共晶焊料成分在共晶温度以下具有恒定的化学势,因此它可以在电迁移中实现上坡扩散和几乎完全的相分离,而不会产生电阻。由于Al或Cu互连引起的焦耳加热会在焊点中引起非常大的温度梯度,因此热迁移伴随着电迁移。在本次演讲中,将讨论当电力与热力、化学力或机械力相结合时倒装芯片焊点的可靠性问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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