{"title":"Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection","authors":"Dingrui Zhang, Weihai Fan, Jizhou Li, Kelly Yang","doi":"10.1109/CSTIC52283.2021.9461431","DOIUrl":null,"url":null,"abstract":"Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461431","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.