Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET

Abstract

The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several realistic aspects of transport physics, remains challenging. In this paper, we investigated the aging and reliability of the NC-FinFET considering the self-heating effect (SHE) and interface trap charges with varying concentration and energy location. In general, the FEPolarization and hydrodynamic models cannot be coupled at the same simulation flow; thus, we employed the iterative approach. Due to SHE, the lattice temperature increases, which impacts the Landau parameters and, in turn, the NC behavior. Moreover, we also evaluated the impact of ambient temperature on device performance with and without (w/o) considering SHE.