Investigation of the deposition features and characteristics of diffusion-barrier layers of Ti-TiN for metallization in MIS-transistor structures with a vertical channel

Abstract

The paper presents the results of studying the process of deposition of a Ti-TiN layer coating in a trenches in a silicon substrate. It is shown that one of the promising methods for the deposition of organometallic compounds from the gas phase is MOCVD, characterized by an increased conformity of the film deposition of on a relief surface. The data showing the high-quality filling of trenches in silicon with two-layer Ti-TiN coating are presented.