Low dimensional simulator for carbon-based devices

Chin Lin Ng, M. Tan
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引用次数: 1

Abstract

Carbon-based devices such as carbon nanotubes (CNT) and graphene nanoribbon (GNR) have been explored rigorously as the potential successor to conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The limitations of silicon-based devices have catalysed much breakthrough research on carbon-based devices. In this paper, a comprehensive quantum simulation tool based on carbon devices is developed as a graphical user interface (GUI) using MATLAB. It is known as Low Dimensional Simulator (LODISI). This simulation tool allows the user to reach a trade-off between precision and time, as it provides impromptu analysis either by graph or direct calculation values. In addition, the auto generation of the voltage transfer curve from the complementary nanotransistor drain characteristics is one of the significant feature of LODISI.
碳基器件低维模拟器
碳基器件,如碳纳米管(CNT)和石墨烯纳米带(GNR),作为传统金属氧化物半导体场效应晶体管(MOSFET)的潜在继任者,已经得到了严格的探索。硅基器件的局限性催化了碳基器件的许多突破性研究。本文利用MATLAB开发了一种基于碳器件的综合量子仿真工具作为图形用户界面(GUI)。它被称为低维模拟器(LODISI)。此仿真工具允许用户在精度和时间之间进行权衡,因为它通过图形或直接计算值提供了即兴分析。此外,从互补的纳米晶体管漏极特性中自动生成电压传递曲线是LODISI的重要特征之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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