Pulsed Bias-RF Power GaAs MMIC Testing

Abstract

Development of automated on-wafer test methods over the past few years has made possible the highly accurate characterization of both passive and low-power active microwave devices without the extra time, expense, and accuracy degradation introduced by packaging. Probes operating from dc to 65 GHz and enhanced calibration procedures such as the TRL method [ l ] have aided in construction of test systems that non-destructively characterize large quantities of microwave devices to quickly provide accurate statistical data.