Low power application for nano scaled Memristor based 2∶1 multiplexer

Arpana Verma, S. Akashe
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引用次数: 5

Abstract

Now a day market demands compressed devices that operates on low voltage and causes less noise in the output. Advanced nano scale very large integrated circuits are facing significant timing closure challenges especially due to random on chip threshold voltage variations. Memristor can play an important role in improving the scalability and efficiency of existing memory technology. Accordingly this article introduces Memristor based 2:1 multiplexer. Memristor is non linear passive two terminal electrical components relating electric charge. Memristor has dynamic relationship between current and voltage including a memory of past voltage or current. In this paper two main properties of Memristor is highlighted firstly nano scale dimension and another it's non volatile memory characteristics. By using these properties it gives better way to design the circuit as well as it stored output too. With the many advantages of Memristor CMOS it becomes possible to reduce the area on silicon chip. Here many CMOS transistors are replaced by few Memristor and multiplexer is made. All related parameters of multiplexer, are calculated in the cadence virtuoso tool and 45nm technology with 0.7 v operating voltage.
基于2∶1多路复用器的纳米忆阻器的低功耗应用
现在,市场每天都需要在低电压下工作、输出噪音更小的压缩设备。先进的纳米级超大集成电路面临着重大的时序关闭挑战,特别是由于随机的片上阈值电压变化。忆阻器在提高现有存储技术的可扩展性和效率方面发挥着重要作用。据此,本文介绍了基于忆阻器的2:1多路复用器。忆阻器是与电荷有关的非线性无源双端电气元件。忆阻器具有电流和电压之间的动态关系,包括对过去电压或电流的记忆。本文重点介绍了忆阻器的两个主要特性:一是纳米尺寸,二是非易失性存储特性。通过利用这些特性,可以更好地设计电路以及存储输出。由于忆阻式CMOS的诸多优点,使其在硅片上的面积减小成为可能。在这里,许多CMOS晶体管被少数忆阻器和多路复用器所取代。多路复用器的所有相关参数均在cadence virtuoso工具和45纳米技术中计算,工作电压为0.7 v。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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