Investigations on contact punch-through in 28 nm FDSOI through virtual fabrication

Abstract

The ultra-thin body-bias (UTBB) and fully- depleted silicon on insulator (FDSOI) 28nm technology offers the capability of extreme low power performance, in part because of the use of ultra-thin buried oxide. This unique capability could be jeopardized by the probability of over etching the buried oxide layer during the formation of contacts, with potential generation of electrical short with the substrate. We used SEMulator3D virtual fabrication platform from Coventor to model the contact punch-through mechanism. We then run a design of experiment with the model to quantify the sensitivity of each process variable. Finally we used the virtual fabrication methodology to improve the robustness of the process.