P. Confalonieri, M. Zamprogno, Francesca Girardi, G. Nicollini, A. Nagari
{"title":"A 2.7mW 1MSps 10b analog-to-digital converter with built-in reference buffer and 1LSB accuracy programmable input ranges","authors":"P. Confalonieri, M. Zamprogno, Francesca Girardi, G. Nicollini, A. Nagari","doi":"10.1109/ESSCIR.2004.1356666","DOIUrl":null,"url":null,"abstract":"A CMOS 1 MSps 10 bit charge-redistribution SAR ADC processes single-ended signals with 1 LSB accuracy selectable input ranges up to supply voltage. A new DAC architecture presents the benefits of a differential approach while sampling single-ended signals. Thanks to new low power design solutions in the ADC comparator and the built-in reference buffer, the total ADC power consumption is only 2.7 mW at 2.4 V supply and 1 MSps. The active area is 0.4 mm/sup 2/ in a 0.35 /spl mu/m CMOS process.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34
Abstract
A CMOS 1 MSps 10 bit charge-redistribution SAR ADC processes single-ended signals with 1 LSB accuracy selectable input ranges up to supply voltage. A new DAC architecture presents the benefits of a differential approach while sampling single-ended signals. Thanks to new low power design solutions in the ADC comparator and the built-in reference buffer, the total ADC power consumption is only 2.7 mW at 2.4 V supply and 1 MSps. The active area is 0.4 mm/sup 2/ in a 0.35 /spl mu/m CMOS process.