Three-dimensional topography simulation for deposition and etching processes using a level set method

Abstract

We present, the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.