Modelling and investigation of III-V compound semiconductor based HEMT's for high performance applications

Abstract

This paper investigates indium antimonide based quantum well field effect transistors with 40 nm physical gate length. Self consistent T-CAD simulations are used to study the high-speed potential of InSb field-effect transistors and its suitable for high speed, very low power logic applications. At the room temperature electron mobility in excess of 30,000 cm2/V-1s-1 in material with sheet carrier density typical of that employed in analogue transistors. 40nm gate length is used to obtain maximum drain current of 6.4e-4A/μm and the threshold voltage of the device is found to be -0.5V. The maximum drain current is found to be 6.4e-4 for the doping concentration of 1e+19. The OFF current of the device is found to be 2.642e-07A/μm when the gate voltage increases beyond 0.2V.