Frequency Multiplier Based on Field-Effect Transistor Structure with Negative Differential Resistance for Infocommunication System Facilities

Abstract

A new electrical circuit of signal frequency multiplier based on nonlinear and reactive properties of field-effect transistor structure with negative differential resistance has been developed. Negative differential resistance provided compensating losses in the oscillating circuit, which increased the signal output power, efficiency of the multipliers, as well as stability of their operation. Equivalent circuit has been developed, on its basis the operation of frequency multiplier in the modes of frequency doubling and tripling has been investigated. A mathematical model of frequency multipliers based on nonlinear and reactive properties of the transistor structures with negative resistance has been proposed. The research results confirm the efficiency of the proposed frequency multipliers in a wide frequency range.