Post-Silicon Design Methodology on Chip Power Characterization, Validation, and Debug Applied on High Performance Per Watt Microprocessor

Y.-C.S. Chen, D. Lu, Gang Yuan
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引用次数: 3

Abstract

As performance per Watt concept being adapted on CPU's performance, a comprehensive post-silicon design methodology on chip power characterization, debug, and validation developed for an energy-efficient product performance become ever more important. An infrared photon-emission (IREM) based technique has been established to meet the needs. With those developed tool capabilities, we can validate simulated fullchip power, determine the causes of excessive power leakage, generate die power and thermal maps, and eventually optimize follow-on designs for power performance. This newly developed techniques have been applied and proven reusable on multiple core microprocessors fabricated under 90 nm and 65 nm CMOS technology. Examples of 5-8% power saving as compared with the first silicon data are presented here to demonstrate the success on debug and design optimization on full chip power.
芯片功率表征、验证和调试的后硅设计方法应用于高性能每瓦微处理器
随着每瓦特性能概念在CPU性能上的调整,为实现节能产品性能而开发的芯片功率特性、调试和验证的综合后硅设计方法变得越来越重要。为此,建立了一种基于红外光子发射(IREM)的技术。利用这些开发的工具功能,我们可以验证模拟的全芯片功率,确定过度功率泄漏的原因,生成模具功率和热图,并最终优化功率性能的后续设计。这项新开发的技术已经应用于90纳米和65纳米CMOS技术制造的多核微处理器上,并被证明是可重复使用的。与第一个硅数据相比,这里给出了5-8%的功耗节约的例子,以证明在全芯片功耗下调试和设计优化的成功。
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