InAs(P,Sb)/InAsSb LEDs emitting in the 3-4 /spl mu/m range at room temperature

Abstract

We report the emission characteristics of MOVPE-grown InAs(P,Sb)/InAsSb multiquantum-well (MQW) LEDs operating in the mid-infrared spectral range (3-4 /spl mu/m). InAsP-InAsSb MQW structures exhibit at room temperature strong electroluminescence at 4.2 /spl mu/m, allowing the detection of CO/sub 2/. InAsPSb-InAsSb MQW structures show intense narrow (FWHM=75 nm) spontaneous emission around 3.3 /spl mu/m up to 270 K. The difference in photoluminescence (PL) energies for InAs(P)/InAsSb and InAsPSb-InAsSb MQW structures is explained supposing that the InAsPSb/InAsSb system has type-I band alignment whereas the InAs/InAsSb and InAsP/InAsSb quantum-wells are type-II, which can be confirmed by our calculations.