High current operation of GaN power HEMT

Abstract

We report high current operation of GaN power HEMTs fabricated on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). In order to decrease an electrical resistance of the wiring to take out a high current, the thickness of Al plating was 3 Pm. In addition, in order to decrease a thermal resistance, the substrate was ground to 150 Pm. The drain current was over 30 A and the specific on-resistance was 14.5 m: -cm 2 under pulse measurement with the gate width of 157 mm. A high temperature operation over 300 °C was also verified.