Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides

Abstract

Experimental results on the leakage effects in ultrathin oxides ( nm) reveal that electron-hole recombination dominates the conduction process, at least at low voltages. The dependences of leakage and interface states on stress dose, stress polarity and time after stress are analyzed, providing evidence for the dominant role of bulk defect states in the leakage mechanism. Simulations with a recombinationand trapassisted tunneling model are finally shown, in support of the interpretation based on bulk defects.