Heat-resistant Ohmic Contact System to Polycrystalline Diamond

Abstract

Ohmic contacts to polycrystalline diamond thin films were formed using Ti/Au and Ti/Mo/Au metal structures. The contact resistivity was investigated as the main parameters of ohmic contact quality. In case of using Mo as diffusion barrier essential variation of electrophysical parameters was not observed after rapid thermal annealing at 800°C with 60 seconds duration. The structural study was performed by Auger profiling and X-ray diffraction analysis. It was established that the contact structure Ti/Mo/Au is thermostable in the temperature range up to 800°C, and has a low contact resistivity of 4.8×10−5 Ohm.cm2 at room temperature. These contacts are promising as temperature sensors for diamond-based heat exchangers in nanosized devices.