Life time characterization for a highly robust metallization

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2015-04-19 DOI:10.1109/EUROSIME.2015.7103123

K. Weide-Zaage, J. Kludt, M. Ackermann, V. Hein, M. Erstling

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引用次数: 6

Abstract

For mixed signal applications it is necessary to have metallization which are able to carry high currents. Also the on chip integration leads to special requirements on the metallization concerning their robustness. A common method for the determination of interconnect lifetime is described in JP001A and based on Black's law and the measurement of time to failure, medium stress current density and medium stress temperature. The highly robust metallization presented here, which was developed for higher current and temperature applications shows more complicated shapes than presently used metallization systems with metal line tracks and via. To determine a realistic life time of highly robust metallization the used method is not applicable anymore. A more suitable determination of the variables current density and temperature for AlCu metallization with W-plug can be achieved by simulations. In the metal line layout the most critical locations regarding mass flux are chosen. The results are validated by measurements.

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高强度金属化的寿命表征

在混合信号应用中，必须采用能够承载大电流的金属化材料。此外，片上集成对金属化的鲁棒性也提出了特殊的要求。在JP001A中描述了一种确定互连寿命的常用方法，该方法基于布莱克定律和失效时间、介质应力电流密度和介质应力温度的测量。这里展示的高度坚固的金属化是为更高的电流和温度应用而开发的，它比目前使用的金属线轨道和通孔的金属化系统显示出更复杂的形状。为了确定高鲁棒金属化的实际寿命，以往的方法已不再适用。模拟结果表明，w塞铝铜金属化过程中电流密度和温度的确定更为合适。在金属线布置中，选择质量通量最关键的位置。结果经测量验证。

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2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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