DC-110GHz continuous variable attenuator based on 65nm CMOS process

Abstract

Continuous variable attenuator with wide bandwidth has been designed and fabricated in a 65nm CMOS process. This π-type with three shunt FETs in one side demonstrates state-of-the art performance showing a minimum insertion loss of 0.13–2.48 dB and good matching across the whole band. The attenuator has a continuous controllability from DC-110GHz with an attenuation range more than 16 dB as voltage bias changed constantly varies from 0 to 1.2V. Measurements also show return loss is greater than −22dB from 10 to 110GHz. The chip size is 340×280um2 and the core area is 26×109um2.