Computer simulation of photosensitive sensors based on polysilicon p/i and p/i/n structures

Abstract

In this paper, a semiconductor device simulator PC1D is used to investigate the behavior of photosensitive polycrystalline p/i and p/i/n structures. The main physical characteristics - impurity concentrations, diffusion lengths, bulk and surface recombinations are varied in a wide range. The junction depths and thicknesses of the constituent layers are fixed. The obtained electrical characteristics for both photosensitive structures are compared. On the basis of the obtained results, photosensitive sensor optimized structures are proposed. It is shown that PC1D can be successfully applied for the simulation of polycrystalline photosensitive structures.