Electrical characteristics of two dimensionally modeled InGaN/InN/InGaN-based double channel HEMTs (DHEMTs)

Abstract

In this paper, InGaN/InN/InGaN-based double channel HEMTs are investigated by numerical simulation from the self-consistent solution of Schrodinger-Poisson systems. The influences of polarization charges and quantum effects are incorporated into this model. The simulation model predicts the two-dimensional electrical characteristics (internal electric fields and distribution of charges in the channel) that are associated with specified physical structures and bias conditions through the proper material parameters, the polarization field and surface states. Corresponding analysis and discussion based on the simulation results are subsequently given. This analysis provides a platform to investigate the InN-based double channel HEMTs and to optimize their design.