Flash Memory Die Sort by a Sample Classification Method

Yu-Chun Dawn, J. Yeh, Cheng-Wen Wu, Chia-Ching Wang, Yung-Chen Lin, Chao-Hsun Chen
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引用次数: 1

Abstract

As the memory cells keep scaling down and designs are getting bigger and faster, uncertainty is becoming one of the greatest challenges for the semiconductor industry. Unexpected and unpredictable behaviors of devices usually lead to poor quality and reliability. Low-cost test techniques that improves die sorting accuracy thus are critical for advanced devices. Flash memory is more prone to such problem compared with others. Large capacity, high density, and complicated cell structure makes flash memory cell behavior difficult to predict precisely. Even when we test the dies on the same wafer it can be bothering, as each of them may ask for different test condition due to geometric process variation. As a fast and easy-to-use method to solve the problem, we propose a sample classification method. It is not only effective for flash memory testing, but also for other types of circuits that face similar test problem. Experimental result shows that the method solves the flash memory die sort problem efficiently and accurately. The test time is greatly reduced-for an industrial chip, the test time is reduced from 8,817 ms to 718 ms. Moreover, the proposed approach is also suitable for design-for-testability (DFT) implementation that can easily be integrated with a commodity or embedded memory.
基于样本分类方法的闪存芯片排序
随着存储单元的不断缩小,设计变得越来越大、越来越快,不确定性正成为半导体行业面临的最大挑战之一。设备的意外和不可预测的行为通常会导致质量和可靠性差。低成本的测试技术提高了模具分类的准确性,因此对先进的设备至关重要。闪存比其他内存更容易出现这样的问题。大容量、高密度和复杂的电池结构使得闪存电池的性能难以精确预测。即使我们在同一晶圆上测试模具,也可能会很麻烦,因为由于几何工艺变化,每个模具可能要求不同的测试条件。作为一种快速简便的解决方法,我们提出了一种样本分类方法。它不仅对闪存测试有效,而且对面临类似测试问题的其他类型电路也有效。实验结果表明,该方法有效、准确地解决了闪存芯片排序问题。测试时间大大缩短-对于工业芯片,测试时间从8,817 ms减少到718 ms。此外,所提出的方法也适用于可测试性设计(DFT)实现,可以很容易地与商品或嵌入式存储器集成。
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