Blocking of Impacts of Single Ionizing Particles by CMOS C-Element in Two-Phase Systems

Abstract

The work presents the TCAD simulation of the 65 nm bulk CMOS C-element as resistant to the single-event transients. The charge collection from a track of a single nuclear particle simulates in impacted on drain regions of the transistors, which leads to the error pulses in the output of 2-phase inverters and C-element. The TCAD simulation used the tracks along the normal to the chip. The linear energy transfer from a particle to the track is 60 MeV.cm2/mg.