UHF-1: a high speed complementary bipolar analog process on SOI

Abstract

A complementary silicon bipolar process has been developed for high-performance analog applications. The process features high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz, respectively. The transistors have a double polysilicon, self-aligned structure which is isolated by using bonded wafer silicon-on-insulator (SOI) technology and vertical trenches. The circuit components are interconnected with two levels of metallization. The UHF-1 process has been used to create several advanced analog high-frequency integrated circuits in a monolithic form.<>