Analysis of Super Cut-off Transistors for Ultralow Power Digital Logic Circuits

A. Raychowdhury, Xuanyao Fong, Qikai Chen, K. Roy
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引用次数: 13

Abstract

Super cut-off devices with sub-60mV/decade subthreshold swings have recently been demonstrated and being extensively studied. This paper presents a feasibility analysis of such tunneling devices for ultralow power subthreshold logic. Analysis shows that this device can deliver 800times higher performance (@iso-IOFF) compared to a MOSFET. The possible use of this device as a sleep transistor in conjunction with the regular Si MOSFET shows 2000times average improvement in leakage power compared to Si MOSFETs
用于超低功耗数字逻辑电路的超级截止晶体管分析
具有低于60mv / 10年亚阈值振荡的超级截止装置最近被证明并被广泛研究。本文对这种超低功耗亚阈值逻辑隧道器件的可行性进行了分析。分析表明,与MOSFET相比,该器件可以提供800倍的性能(@iso-IOFF)。该器件作为睡眠晶体管与常规Si MOSFET结合使用的可能性显示,与Si MOSFET相比,泄漏功率平均提高了2000倍
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