Bi/sub 4/Ti/sub 3/O/sub 12/-based lead-free piezoelectric ceramics with grain orientation

H. Nagata, Y. Fujita, H. Enosawa, T. Takenaka
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Abstract

Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.
具有晶粒取向的Bi/sub 4/Ti/sub 3/O/sub 12基无铅压电陶瓷
研究了Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITV-x]和B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x]陶瓷的压电性能。此外,采用热锻(HF)方法研究了BITN和BITV陶瓷的晶粒取向对压电性能的影响。随着掺杂量的增加,BITV陶瓷的最佳烧结温度逐渐降低。在随机取向的普通烧成(OF)样品上,BITN-0.08和BITV-0.02陶瓷的机电耦合系数k/sub 33/分别提高了0.20和0.25。在HF样品上,BITN-0.08和BITV-0.04陶瓷的k/sub 33/值分别提高了0.39和0.38。
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