{"title":"Bi/sub 4/Ti/sub 3/O/sub 12/-based lead-free piezoelectric ceramics with grain orientation","authors":"H. Nagata, Y. Fujita, H. Enosawa, T. Takenaka","doi":"10.1109/ISAF.2002.1195929","DOIUrl":null,"url":null,"abstract":"Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Piezoelectric properties of Bi/sub 4/Ti/sub 3-x/Nb/sub x/O/sub 12/ [BITN-x] and B/sub 4/Ti/sub 3-x/V/sub x/O/sub 12/ [BITV-x] ceramics are investigated. Furthermore, grain orientation effects of BITN and BITV ceramics on their piezoelectric properties are studied using the hot-forging (HF) method. The optimal sintering temperature of the BITV ceramic becomes lower with increasing the amount of doped-V ions. On the ordinarily fired (OF) sample with a random orientation, an electromechanical coupling factor, k/sub 33/ of BITN-0.08 and BITV-0.02 ceramics enhanced 0.20 and 0.25. On the HF sample, k/sub 33/ values of BITN-0.08 and BITV-0.04 ceramics enhanced the 0.39 and 0.38, respectively.