The GE high density overlay MCM interconnect method solves high power needs of GaAs system design

Abstract

As electronic systems signals and clock rates exceed 100 MHz, designers must consider the use of emerging high performance digital GaAs chip technology. Because GaAs parts do not yield at the high rates of more mature silicon technology devices, it is presently infeasible to build monolithic wafer scale integration (WSI) with GaAs technology. A hybrid wafer scale integration (HWSI) approach has been developed to overcome the limits of monolithic approaches, including the ability to provide for multichip module (MCM) process optimizations serving low IR loss requirements for power delivery, and use of overlay interconnect, first placing the chip into a structure for the most advantageous thermal management.<>