Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM)

Hyunui Lee, S. Kang, Hye-Seung Yu, Won-Joo Yun, Jae-Hun Jung, Sungoh Ahn, Wang-Soo Kim, Beomyong Kil, Y. Sung, Sang-Hoon Shin, Yong-Sik Park, Yong-Hwan Kim, Kyung-Woo Nam, Indal Song, Kyomin Sohn, Yong-Cheol Bae, J. Choi, Seong-Jin Jang, G. Jin
{"title":"Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM)","authors":"Hyunui Lee, S. Kang, Hye-Seung Yu, Won-Joo Yun, Jae-Hun Jung, Sungoh Ahn, Wang-Soo Kim, Beomyong Kil, Y. Sung, Sang-Hoon Shin, Yong-Sik Park, Yong-Hwan Kim, Kyung-Woo Nam, Indal Song, Kyomin Sohn, Yong-Cheol Bae, J. Choi, Seong-Jin Jang, G. Jin","doi":"10.1109/ASSCC.2016.7844162","DOIUrl":null,"url":null,"abstract":"This paper presents a HBM device which verifies DC and AC characteristics of I/O circuits without direct contact on the u-bump. To verify DC and AC characteristics internally, design for excellence (DFx) circuits are implemented. Also, to perform accurate impedance calibration without ZQ pin, reference resistor calibration logic is embedded. In comparison of DFx AC result and automatic test equipment measurement result, it is confirmed that the DFx AC operation is well correlated with normal operation up to 2Gb/s.","PeriodicalId":278002,"journal":{"name":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2016.7844162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents a HBM device which verifies DC and AC characteristics of I/O circuits without direct contact on the u-bump. To verify DC and AC characteristics internally, design for excellence (DFx) circuits are implemented. Also, to perform accurate impedance calibration without ZQ pin, reference resistor calibration logic is embedded. In comparison of DFx AC result and automatic test equipment measurement result, it is confirmed that the DFx AC operation is well correlated with normal operation up to 2Gb/s.
高带宽存储器(HBM)非接触式2Gb/s I/O测试方法设计
本文提出了一种不直接接触u型凸块的HBM装置,用于验证I/O电路的直流和交流特性。为了在内部验证直流和交流特性,实现了卓越设计(DFx)电路。此外,为了在没有ZQ引脚的情况下进行精确的阻抗校准,嵌入了参考电阻校准逻辑。通过DFx交流结果与自动测试设备测量结果的对比,证实DFx交流运行与正常运行具有良好的相关性,最高可达2Gb/s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信