A 0.5 V Receiver in 90 nm CMOS for 2.4 GHz Applications

N. Stanic, A. Balankutty, P. Kinget, Y. Tsividis
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引用次数: 12

Abstract

We report an ultra-low voltage RF receiver for applications in the 2.4 GHz band, designed in a 90 nm CMOS technology. The sliding-IF receiver prototype includes an LNA, an image-reject LC filter with single-ended to differential conversion, an RF mixer, an LC IF filter, a quadrature IF mixer, RF and IF LO buffers, and an I/Q baseband section with a VGA and a low-pass channel-select filter in each path, all integrated on-chip. It has a programmable overall gain of 30 dB, noise figure of 18 dB, out-of-channel IIP3 of -22 dBm, and 26 dB of on-chip image rejection. The 3.4 mm2 chip consumes 8.5 mW from a 0.5 V supply.
用于2.4 GHz应用的90nm CMOS 0.5 V接收器
我们报告了一种应用于2.4 GHz频段的超低电压射频接收器,采用90nm CMOS技术设计。滑动中频接收器原型包括一个LNA,一个带单端到差分转换的图像抑制LC滤波器,一个RF混频器,一个LC中频滤波器,一个正交中频混频器,RF和中频LO缓冲器,以及一个带VGA和低通通道选择滤波器的I/Q基带部分,所有这些都集成在片上。它的可编程总增益为30 dB,噪声系数为18 dB,通道外IIP3为-22 dBm,片上图像抑制为26 dB。3.4 mm2的芯片从0.5 V电源消耗8.5 mW。
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