{"title":"An Integrated 1.8V to 3.3V Regulated Voltage Doubler Using Active Diodes and Dual-Loop Voltage Follower for Switch-Capacitive Load","authors":"Yat-Hei Lam, W. Ki, C. Tsui","doi":"10.1109/VLSIC.2006.1705324","DOIUrl":null,"url":null,"abstract":"An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"24 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
An integrated 1.8V to 3.3V regulated voltage doubler is presented. Active diodes realized by MOS transistors only are employed to prevent reverse charge transfer. The switching low dropout regulator consists of a dual-loop voltage follower that could drive a large switch-capacitive load and achieves a fast load transient of less than 5mus for a 140mA current step. The regulated doubler was fabricated in a 0.35mum CMOS process occupying an area of 0.74mm2