S. Shahramian, A. Hart, A. Chan Carusone, P. Garcia, P. Chevalier, S. Voinigescu
{"title":"A D-band PLL covering the 81–82 GHz, 86–92 GHz and 162–164 GHz bands","authors":"S. Shahramian, A. Hart, A. Chan Carusone, P. Garcia, P. Chevalier, S. Voinigescu","doi":"10.1109/RFIC.2010.5477284","DOIUrl":null,"url":null,"abstract":"This paper describes the highest frequency PLL reported to date. It achieves the widest locking range and the lowest phase noise of −93.8 dBc/Hz at 90 GHz and 78.9 dBc/Hz at 163 GHz, both measured at a 100-kHz offset. The PLL was fabricated in a 0.13-µm SiGe BiCMOS process and covers the 81–82 GHz, 86–92 GHz, and 162–164 GHz bands. It integrates on a single die a fundamental-frequency 86–92 GHz Colpitts VCO, a differential push-push 160-GHz Colpitts VCO with quadrature outputs at 80 GHz, a programmable divider chain, charge-pump, and all loop filter components. The single-ended PLL output power is −3 dBm at 90 GHz and −25 dBm at 164 GHz and consumes 1.25 W from 1.8-V, 2.5-V and 3.3-V supplies. The chip occupies 1.1mm × 1.7mm including pads.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
This paper describes the highest frequency PLL reported to date. It achieves the widest locking range and the lowest phase noise of −93.8 dBc/Hz at 90 GHz and 78.9 dBc/Hz at 163 GHz, both measured at a 100-kHz offset. The PLL was fabricated in a 0.13-µm SiGe BiCMOS process and covers the 81–82 GHz, 86–92 GHz, and 162–164 GHz bands. It integrates on a single die a fundamental-frequency 86–92 GHz Colpitts VCO, a differential push-push 160-GHz Colpitts VCO with quadrature outputs at 80 GHz, a programmable divider chain, charge-pump, and all loop filter components. The single-ended PLL output power is −3 dBm at 90 GHz and −25 dBm at 164 GHz and consumes 1.25 W from 1.8-V, 2.5-V and 3.3-V supplies. The chip occupies 1.1mm × 1.7mm including pads.