Characteristics of residual products in HF gas-phase etching of sacrificial oxides for silicon micromachining

W. Jang, C. Choi, C. S. Lee, Yoonshik Hong, Jong-Hyun Lee
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引用次数: 2

Abstract

We employed a newly developed HF gas-phase etching (GPE) process for the removal of sacrificial oxides. The structural layers are P-doped multi-stacked polysilicon and silicon epi-layer of SOI substrates and sacrificial layers are TEOS, LTO, PSG, and thermal oxides on silicon nitride or polysilicon substrates. The characteristics of residual products on polysilicon or silicon nitride were scrutinized by using SEM and AES. After GPE of TEOS, LTO, and PSG on the silicon nitride substrate, the polysilicon microstructures are stuck to the underlying substrate because neither the SiOxNy layers nor the H3PO4(H2O) layer vaporize. We found that the etching of TEOS, LTO, and thermal oxide on a polysilicon substrate shows no residual product and no stiction.
硅微加工牺牲氧化物HF气相刻蚀残余产物特性
我们采用了一种新开发的HF气相蚀刻(GPE)工艺去除牺牲氧化物。结构层为掺杂p的多层多晶硅和SOI衬底的硅外延层,牺牲层为氮化硅或多晶硅衬底上的TEOS、LTO、PSG和热氧化物。利用扫描电镜和原子发射光谱分析了多晶硅和氮化硅表面残留产物的特征。在氮化硅衬底上对TEOS、LTO和PSG进行GPE后,由于SiOxNy层和H3PO4(H2O)层都没有蒸发,多晶硅微结构被粘在衬底上。我们发现TEOS, LTO和热氧化物在多晶硅衬底上的蚀刻没有残留产物,也没有粘性。
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