W. Jang, C. Choi, C. S. Lee, Yoonshik Hong, Jong-Hyun Lee
{"title":"Characteristics of residual products in HF gas-phase etching of sacrificial oxides for silicon micromachining","authors":"W. Jang, C. Choi, C. S. Lee, Yoonshik Hong, Jong-Hyun Lee","doi":"10.1117/12.341163","DOIUrl":null,"url":null,"abstract":"We employed a newly developed HF gas-phase etching (GPE) process for the removal of sacrificial oxides. The structural layers are P-doped multi-stacked polysilicon and silicon epi-layer of SOI substrates and sacrificial layers are TEOS, LTO, PSG, and thermal oxides on silicon nitride or polysilicon substrates. The characteristics of residual products on polysilicon or silicon nitride were scrutinized by using SEM and AES. After GPE of TEOS, LTO, and PSG on the silicon nitride substrate, the polysilicon microstructures are stuck to the underlying substrate because neither the SiOxNy layers nor the H3PO4(H2O) layer vaporize. We found that the etching of TEOS, LTO, and thermal oxide on a polysilicon substrate shows no residual product and no stiction.","PeriodicalId":318748,"journal":{"name":"Design, Test, Integration, and Packaging of MEMS/MOEMS","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Design, Test, Integration, and Packaging of MEMS/MOEMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.341163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We employed a newly developed HF gas-phase etching (GPE) process for the removal of sacrificial oxides. The structural layers are P-doped multi-stacked polysilicon and silicon epi-layer of SOI substrates and sacrificial layers are TEOS, LTO, PSG, and thermal oxides on silicon nitride or polysilicon substrates. The characteristics of residual products on polysilicon or silicon nitride were scrutinized by using SEM and AES. After GPE of TEOS, LTO, and PSG on the silicon nitride substrate, the polysilicon microstructures are stuck to the underlying substrate because neither the SiOxNy layers nor the H3PO4(H2O) layer vaporize. We found that the etching of TEOS, LTO, and thermal oxide on a polysilicon substrate shows no residual product and no stiction.