The applications of Ga-doped ZnO films on LED chips

L. Yin, T. Han, J. Wang
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Abstract

Indium Tin Oxide (ITO) films are widely used on LED chips nowadays for the applications on ohmic contacts and current diffusion layer of p-GaN. However, ITO film is limited by the high cost and poison, it's necessary to be instead. The transparent conductive oxide basic on Zinc oxide is one of the best choices. In this paper, a muti-structure, ITO/GZO films were carried out for an instead of ITO films. It was found ITO (5nm)/GZO films could improve the luminous intensity of LED chips with an ideal turn-on voltage. Compared to the LED chips with ITO films, the luminosity of LED chips with ITO (5nm)/GZO were improved by 5%.
ga掺杂ZnO薄膜在LED芯片上的应用
氧化铟锡(ITO)薄膜由于在p-GaN的欧姆接触层和电流扩散层上的应用而被广泛应用于LED芯片上。然而,ITO薄膜受成本高和毒性的限制,有必要进行替代。以氧化锌为基材的透明导电氧化物是最好的选择之一。本文采用多结构的ITO/GZO薄膜来代替ITO薄膜。发现ITO (5nm)/GZO薄膜可以在理想的导通电压下提高LED芯片的发光强度。与ITO薄膜相比,ITO (5nm)/GZO薄膜的发光度提高了5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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