Investigation of substrate resistance and inductance on deep trench capacitor for RF application

Abstract

A circuit analysis is introduced to detect the value of the substrate resistance and the capacitance, which is mainly caused by p-n junction diode. The effect of the substrate resistance on RF application is reported in this paper. When trench number increases the substrate resistance decreases. Effect of the inductance on the capacitor is also investigated. The inductance should be low value in the high frequency range to minimize inductance effect for Radio Frequency (RF) application. A two-port admittance parameter is used to extract the value of capacitance, inductance and substrate resistance.